ENHANCED OXYGEN DIFFUSION AND PRECIPITATION IN SILICON

被引：3

作者：

BERGHOLZ, W

HUTCHISON, JL

PIROUZ, P

机构：

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1986年 / 141卷

关键词：

D O I：

10.1111/j.1365-2818.1986.tb02711.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：143 / 154

页数：12

共 17 条

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[3]

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[9] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

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