LATERAL EPITAXIAL-GROWTH OVER OXIDE

被引：5

作者：

WILSON, LO

CELLER, GK

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

LATERAL EPITAXIAL GROWTH - SEEDING WINDOWS - SOLID-LIQUID INTERFACE;

D O I：

10.1149/1.2113658

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：2748 / 2758

页数：11

共 21 条

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[8] DIELECTRICALLY ISOLATED THICK SI FILMS BY LATERAL EPITAXY FROM THE MELT [J].

CELLER, GK ;

ROBINSON, M ;

TRIMBLE, LE ;

LISCHNER, DJ .

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[9]

CELLER GK, 1985, MATER RES SOC S P, V35, P635

[10]

CELLER GK, 1984, MATER RES SOC S P, V23, P409

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