1/F NOISE FROM VACUUM-CLEANED SILICON

被引：10

作者：

MACRAE, AU

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.1729021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2570 / &

共 10 条

[1] P-LAYERS ON VACUUM HEATED SILICON [J].

ALLEN, FG ;

BUCK, TM ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :979-985

[2] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[3] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161

[4]

KAWAJI S, 1960, J PHYS SOC JPN, V15, P95

[5]

LASSER M, 1957, SEMICONDUCTOR SURFAC, P197

[6] SURFACE ELECTRICAL CHANGES CAUSED BY ADSORPTION OF HYDROGEN AND OXYGEN ON SILICON [J].

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :600-&

[7]

MACRAE AU, 1960, PHYS REV, V119, P62

[8]

MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[9] ELECTRICAL NOISE IN SEMICONDUCTORS [J].

MONTGOMERY, HC .

BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (05) :950-975

[10] 1-F NOISE IN GERMANIUM DEVICES [J].

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (469) :59-68

← 1 →