THE ELECTRON-IMPACT IONIZATION RATE AND BREAKDOWN VOLTAGE IN GAAS/GA0.7AL0.3AS MQW STRUCTURES

被引：12

作者：

DAVID, JPR

MARSLAND, JS

ROBERTS, JS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：294 / 296

页数：3

共 8 条

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