SIMS STUDIES OF BE-9 IMPLANTS IN SEMI-INSULATING INP

被引:26
作者
OBERSTAR, JD
STREETMAN, BG
BAKER, JE
WILLIAMS, P
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1149/1.2124127
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1312 / 1320
页数:9
相关论文
共 59 条
[31]  
HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[32]   MG AND BE ION IMPLANTED GAAS [J].
HUNSPERGER, RG ;
JAMBA, DM ;
WILSON, RG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+
[33]   REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J].
KASAHARA, J ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L151-L154
[34]  
KIMERLING LC, 1975, I PHYS C SER, V23, P126
[35]  
Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33
[36]   BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J].
MAGEE, TJ ;
PENG, J ;
HONG, JD ;
EVANS, CA ;
DELINE, VR ;
MALBON, RM .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :277-279
[37]   ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS [J].
MCLEVIGE, WV ;
HELIX, MJ ;
VAIDYANATHAN, KV ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3342-3346
[38]  
MCLEVIGE WV, ADA0576454G1
[39]  
MEINERS LG, 1979, SOLID STATE ELECTRON, V22, P71
[40]   A DC TO 16GHZ INDIUM-PHOSPHIDE MISFET [J].
MESSICK, L .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :551-&