ELECTRICAL DEGRADATION OF N-SI/PTSI/(TI-W)/AL SCHOTTKY CONTACTS INDUCED BY THERMAL TREATMENTS

[1] INTER-DIFFUSION AND COMPOUND FORMATION IN THE C-SI/PTSI/(TI-W)/A1 SYSTEM [J]. THIN SOLID FILMS, 1982, 88 (01) : 9 - 23

[2] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 538 - 544

[3] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128

[4] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3476 - 3485

[5] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287

[6] REVIEW OF THEORY, TECHNOLOGY AND APPLICATIONS OF METAL-SEMICONDUCTOR RECTIFIERS [J]. THIN SOLID FILMS, 1978, 48 (03) : 261 - 291

[7] Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[8] SULLIVAN MJ, 1978, THIN FILM INTERDIFFU, P26

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO

[1] INTER-DIFFUSION AND COMPOUND FORMATION IN THE C-SI/PTSI/(TI-W)/A1 SYSTEM [J]. THIN SOLID FILMS, 1982, 88 (01) : 9 - 23

[2] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 538 - 544

[3] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128

[4] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3476 - 3485

[5] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287

[6] REVIEW OF THEORY, TECHNOLOGY AND APPLICATIONS OF METAL-SEMICONDUCTOR RECTIFIERS [J]. THIN SOLID FILMS, 1978, 48 (03) : 261 - 291

[7] Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[8] SULLIVAN MJ, 1978, THIN FILM INTERDIFFU, P26

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO