A PARAMETRIC STUDY OF EXTRINSIC BISTABILITY IN THE CURRENT-VOLTAGE CURVES OF RESONANT-TUNNELING DIODES

被引：14

作者：

JOGAI, B ^{[1
]}

KOENIG, ET ^{[1
]}

机构：

[1] WRIGHT RES & DEV CTR,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report numerical simulations of typical experimental conditions under which current-voltage (I-V) measurements of resonant-tunneling diodes are conducted. We find that curve tracer measurements can cause bistability and hysteresis in the negative differential resistance (NDR) region. We also find that dc measurements can produce oscillations which distort the shape of the I-V curve. When the series resistance is large, there are three states for a given bias in the NDR region because of the folding of the I-V curve. We believe this phenomenon, extrinsic tristability, to be the source of extrinsic bistability.

引用

页码：3381 / 3383

页数：3

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