STRUCTURE, CHEMISTRY, AND FERMI-LEVEL MOVEMENT AT INTERFACES OF EPITAXIAL NIAL AND GAAS(001)

被引：11

作者：

CHAMBERS, SA

LOEBS, VA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.585001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：724 / 729

页数：6

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