APPLICATION OF LOW-TEMPERATURE GAAS TO GAAS/SI

被引：4

作者：

FUJIOKA, H ^{[1
]}

SOHN, H ^{[1
]}

WEBER, ER ^{[1
]}

VERMA, A ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

LT-GAAS; GAAS IN SI;

D O I：

10.1007/BF02650010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si(GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 x 10(7) Omega-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.

引用

页码：1511 / 1514

页数：4

共 9 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].