RELATIONSHIP BETWEEN SHORT CHANNEL BEHAVIOR AND LONG-TERM STABILITY OF N-CHANNEL ENHANCEMENT AND DEPLETION MOSFETS

被引：2

作者：

BAUER, F

BALK, P

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90182-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：797 / 806

页数：10

共 47 条

[21] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J].

JAEGER, RC ;

GAENSSLEN, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :501-508

[22]

KONAKA M, 1978, JAPAN J APPL PHY S18, V18, P27

[23] A NUMERICAL-ANALYSIS OF AVALANCHE BREAKDOWN IN SHORT-CHANNEL MOSFETS [J].

KOTANI, N ;

KAWAZU, S .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :681-687

[24] OPTIMUM DESIGN OF N+-N- DOUBLE-DIFFUSED DRAIN MOSFET TO REDUCE HOT-CARRIER EMISSION [J].

KOYANAGI, M ;

KANEKO, H ;

SHIMIZU, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :562-570

[25]

LEE HG, 1981, INT ELECTRON DEVICES, P207

[26]

MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[27] AN OPTIMIZED AND RELIABLE LDD STRUCTURE FOR 1-MU-M NMOSFET BASED ON SUBSTRATE CURRENT ANALYSIS [J].

MATSUMOTO, Y ;

HIGUCHI, T ;

MIZUNO, T ;

SAWADA, S ;

SHINOZAKI, S ;

OZAWA, O .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :349-353

[28]

MITZUTANI Y, 1981, IEEE INT ELECTRON DE, P550

[29] SHORT-CHANNEL MOS-TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIME [J].

MULLER, W ;

RISCH, L ;

SCHUTZ, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1778-1784

[30] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS [J].

NG, KK ;

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :871-876

← 1 2 3 4 5 →