TIME-DEPENDENT ENSEMBLE MONTE-CARLO SIMULATION FOR PLANAR-DOPED GAAS STRUCTURES

被引：13

作者：

WANG, T ^{[1
]}

HESS, K ^{[1
]}

IAFRATE, GJ ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：857 / 861

页数：5

共 13 条

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[8] ELECTRON-TRANSPORT IN PLANAR-DOPED BARRIER STRUCTURES USING AN ENSEMBLE MONTE-CARLO METHOD [J].

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HAUSER, JR ;

GOLIO, JM .

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[9] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

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[10]

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