FABRICATION OF SIGE/SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引：10

作者：

USAMI, N

MINE, T

FUKATSU, S

SHIRAKI, Y

机构：

[1] Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, 153

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0038-1101(94)90241-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of SiGe/Si quantum wire (QWR) structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy (Gs-SiMBE) is reported. Cross sectional image of transmission electron microscope (TEM) clarified a crescent shaped SiGe layer at the bottom of the V-groove. Existence of the quantized state in QWR was evidenced by photoluminescence (PL) spectra of the QWR grown by selective epitaxial growth (SEG) technique.

引用

页码：539 / 541

页数：3

共 11 条

[1] ULTRAFAST CARRIER CAPTURE AND LONG RECOMBINATION LIFETIMES IN GAAS QUANTUM WIRES GROWN ON NONPLANAR SUBSTRATES
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