LOCALIZED-STATE-DENSITY DISTRIBUTION IN POST-HYDROGENATED CVD AMORPHOUS-SILICON

被引：8

作者：

NAKASHITA, T

HIROSE, M

OSAKA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：146 / 149

页数：4

共 8 条

[1]

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[3] GAP STATES AND ELECTRON-SPIN-RESONANCE OF BORON-DOPED CVD AMORPHOUS-SILICON [J].

NAKASHITA, T ;

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OSAKA, Y .

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[4] DEFECT STATES AND ELECTRONIC-PROPERTIES OF POST-HYDROGENATED CVD AMORPHOUS-SILICON [J].

NAKASHITA, T ;

OSAKA, Y ;

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[5] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS [J].

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[6]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[7] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

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[8] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

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OSAKA, Y .

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