EXTRINSIC DOPING AT LOW CONCENTRATIONS FOR CDXHG1-XTE LAYERS GROWN BY MOVPE

被引：19

作者：

MAXEY, CD ^{[1
]}

CAPPER, P ^{[1
]}

WHIFFIN, PAC ^{[1
]}

EASTON, BC ^{[1
]}

GALE, I ^{[1
]}

CLEGG, JB ^{[1
]}

HARKER, A ^{[1
]}

JONES, CL ^{[1
]}

机构：

[1] PHILIPS COMPONENTS LTD,SOUTHAMPTON,HANTS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90986-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The study of arsenic doping has resulted in the capability to control the acceptor level between 1×1016 cm-3 and 2×1017 cm-3 in CdxHg1-xTe grown by MOVPE. An understanding of the dopant incorporation mechanism and diffusion rate has enabled the growth parameters to be adjusted to ensure high (≈100%) electrical activity and homogeneous distribution of the dopant atoms. The acceptor ionization energy obtained from such layers was consistent with extrinsically doped material. Minority carrier lifetime data are also presented. Doped/undoped heterostructures have been produced which have demonstrated p-n junctions following Hg annealing. The high-x regions can behave as barriers to Hg in-diffusion if they cap the undoped region. © 1989.

引用

页码：300 / 304

页数：5

共 15 条

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