FACTORS AFFECTING THE TEMPERATURE UNIFORMITY OF SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY

被引：10

作者：

JOHNSON, SR ^{[1
]}

LAVOIE, C ^{[1
]}

NODWELL, E ^{[1
]}

NISSEN, MK ^{[1
]}

TIEDJE, T ^{[1
]}

MACKENZIE, JA ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1Z1,BC,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature of GaAs substrates is profiled in a molecular-beam epitaxy system with a spatial resolution of 3 mm and a thermal resolution of 0.4-degrees-C, respectively. The effects of substrate doping, back surface textures, thermal contact to the holder, and a pyrolytic boron nitride diffuser plate, on the temperature uniformity, are explored for indium-free mounted substrates. Both positive and negative curvature temperature profiles are observed.

引用

页码：1225 / 1228

页数：4

共 11 条

[1] MBE FILM GROWTH BY DIRECT FREE SUBSTRATE HEATING
ERICKSON, LP
CARPENTER, GL
SEIBEL, DD
PALMBERG, PW
PEARAH, P
KOPP, W
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 536 - 537
[2] MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING
HELLMAN, ES
PITNER, PM
HARWIT, A
LIU, D
YOFFE, GW
HARRIS, JS
CAFFEE, B
HIERL, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 574 - 577
[3] HELLMAN ES, 1986, J CRYST GROWTH, V81, P38
[4] SEMICONDUCTOR SUBSTRATE-TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY IN MOLECULAR-BEAM EPITAXY
JOHNSON, SR
LAVOIE, C
TIEDJE, T
MACKENZIE, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 1007 - 1010
[5] DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH
JORDAN, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2218 - 2227
[6] KIRILLOV DM, Patent No. 5118200
[7] DIFFUSE OPTICAL REFLECTIVITY MEASUREMENTS ON GAAS DURING MOLECULAR-BEAM EPITAXY PROCESSING
LAVOIE, C
JOHNSON, SR
MACKENZIE, JA
TIEDJE, T
VANBUUREN, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 930 - 933
[8] AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 571 - 573
[9] MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED SUBSTRATES
PALMATEER, SC
LEE, BR
HWANG, JCM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 3028 - 3029
[10] WEAVER JH, 1981, PHYSICS DATA OPTICAL

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