Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)

被引：35

作者：

Zettler, JT

Wethkamp, T

Zorn, M

Pristovsek, M

Meyne, C

Ploska, K

Richter, W

机构：

[1] Institut für Festkörperphysik, TU Berlin, D-10623 Berlin

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report on the observation of growth oscillations with monolayer periodicity by ellipsometry. An oscillation amplitude of delta(epsilon(1))=0.05 was measured using an optimized spectroscopic in situ ellipsometer whose wavelength was tuned to the 2.65 eV resonance energy of the arsenic dimers covering the GaAs (001) growth surface. The monolayer periodicity was verified by parallel monitoring of the growth with reflectance anisotropy spectroscopy (RAS). (C) 1995 American Institute of Physics.

引用

页码：3783 / 3785

页数：3

共 11 条

[1]

Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ

[2] SURFACE DIELECTRIC FUNCTIONS OF (2X1) AND (1X2) RECONSTRUCTIONS OF (001) GAAS-SURFACES [J].