FORMATION OF BUBBLES IN BF2+-IMPLANTED SILICON

被引:34
作者
NIEH, CW
CHEN, LJ
机构
关键词
D O I
10.1063/1.96857
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1528 / 1530
页数:3
相关论文
共 18 条
[1]   BEHAVIOR OF BORON MOLECULAR ION IMPLANTS INTO SILICON [J].
BEANLAND, DG .
SOLID-STATE ELECTRONICS, 1978, 21 (03) :537-547
[2]   RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].
CARTER, C ;
MASZARA, W ;
SADANA, DK ;
ROZGONYI, GA ;
LIU, J ;
WORTMAN, J .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461
[3]   FACTORS INFLUENCING THE FORMATION AND GROWTH OF FAULTED LOOPS IN BF2+-IMPLANTED SILICON [J].
CHEN, LJ ;
WU, YJ ;
WU, IW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3520-3527
[4]   DENDRITIC GROWTH OF VOIDS IN HEAVY-ION IRRADIATED PURE NICKEL [J].
CHEN, LJ ;
ARDELL, AJ .
SCRIPTA METALLURGICA, 1977, 11 (10) :871-874
[5]   DENDRITIC GROWTH OF VOIDS IN IRRADIATED NICKEL-ALUMINUM ALLOYS [J].
CHEN, LJ ;
ARDELL, AJ .
SCRIPTA METALLURGICA, 1976, 10 (11) :1047-1050
[6]  
CHEN LJ, 1981, J APPL PHYS, V52, P3318
[7]   ELECTRICAL-PROPERTIES OF SI HEAVILY IMPLANTED WITH BORON MOLECULAR-IONS [J].
FUSE, G ;
HIRAO, T ;
INOUE, K ;
TAKAYANAGI, S ;
YAEGASHI, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3650-3653
[8]   DAMAGE EFFECTS IN BORON AND BF2 ION-IMPLANTED P+-N JUNCTIONS IN SILICON [J].
MACIVER, BA ;
GREENSTEIN, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :273-275
[9]  
NIEH CW, UNPUB
[10]   SILICON-GATE N-WELL CMOS PROCESS BY FULL ION-IMPLANTATION TECHNOLOGY [J].
OHZONE, T ;
SHIMURA, H ;
TSUJI, K ;
HIRAO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1789-1795