ELECTRONICALLY STIMULATED DEEP-CENTER REACTIONS IN ELECTRON-IRRADIATED INP - COMPARISON BETWEEN EXPERIMENT AND RECOMBINATION-ENHANCEMENT THEORIES

被引：36

作者：

SIBILLE, A

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.3929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3929 / 3936

页数：8

共 21 条

[1]

[Anonymous], POINT DEFECTS SEMICO

[2] DEFECT REACTIONS IN GAP-(ZN,O) [J].

FEENSTRA, RM ;

MCGILL, TC .

PHYSICAL REVIEW LETTERS, 1981, 47 (13) :925-927

[3] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[4] OBSERVATION OF ATHERMAL DEFECT ANNEALING IN GAP [J].

LANG, DV ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :248-250

[5] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

LEVINSON, M ;

BENTON, JL ;

TEMKIN, H ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992

[6]

MASRI PM, 1984, J ELECTRON MATER, V14, P205

[7]

SHEINKMAN MK, 1983, JETP LETT+, V38, P330

[8] ORIGIN OF THE MAIN DEEP ELECTRON TRAP IN ELECTRON-IRRADIATED INP [J].

SIBILLE, A .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :593-595

[9] A MODEL OF DEEP CENTERS FORMATION AND REACTIONS IN ELECTRON-IRRADIATED INP [J].

SIBILLE, A ;

SUSKI, J ;

GILLERON, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :595-601

[10] ENERGY AND ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN INP [J].

SIBILLE, A ;

SUSKI, J ;

LEROUX, G .

PHYSICAL REVIEW B, 1984, 30 (02) :1119-1121

← 1 2 3 →