ORIGIN OF THE MAIN DEEP ELECTRON TRAP IN ELECTRON-IRRADIATED INP

被引：18

作者：

SIBILLE, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.96477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 595

页数：3

共 14 条

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KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :566-568

[2] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].

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SCHULZ, M .

APPLIED PHYSICS, 1977, 12 (01) :45-53

[3]

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[4] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

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BENTON, JL ;

TEMKIN, H ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992

[5] INTERPRETATION OF PROFILES OBTAINED BY C(V) TECHNIQUE IN PRESENCE OF DEEP TRAPS - APPLICATION TO PROTON IRRADIATED GAAS SAMPLES [J].

LOUALICHE, S ;

NOUAILHAT, A ;

GUILLOT, G .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :577-582

[6] INFLUENCE FROM FREE-CARRIER TAILS IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) [J].

MEIJER, E ;

LEDEBO, LA ;

WANG, ZG .

SOLID STATE COMMUNICATIONS, 1983, 46 (03) :255-258

[7] ENERGY AND ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN INP [J].

SIBILLE, A ;

SUSKI, J ;

LEROUX, G .

PHYSICAL REVIEW B, 1984, 30 (02) :1119-1121

[8] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].

SIBILLE, A ;

BOURGOIN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :956-958

[9]

SIBILLE A, 1984, J ELECTRON MATER A, V14, P1155

[10] DEFECT CENTERS IN HIGH-PURITY HYDRIDE VPE INDIUM-PHOSPHIDE [J].

SUN, SW ;

CONSTANT, AP ;

ADAMS, CD ;

WESSELS, BW .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :149-157

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