DIRECT MEASUREMENT OF DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P-N JUNCTION (SCANNING ELECTRON MICROSCOPY MOS DEVICES SI-AL E)

被引：30

作者：

MACDONALD, NC

EVERHART, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 7卷 / 10期

关键词：

D O I：

10.1063/1.1754252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：267 / +

页数：1

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共 4 条

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DAVIES, RL
GENTRY, FE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +
[2] NOVEL METHOD OF SEMICONDUCTOR DEVICE MEASUREMENTS
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[3] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE
EVERHART, TE
WELLS, OC
MATTA, RK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 929 - 936
[4] REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATION
GREEN, D
SANDOR, JE
OKEEFFE, TW
MATTA, RK
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (01) : 3 - &