MICROSTRUCTURE AND OPTICAL-PROPERTIES IN CVD A-SI-H FILMS

被引：6

作者：

DANESH, P

TONEVA, A

PANTCHEV, B

KUDEYAROVA, V

机构：

[1] BULGARIAN ACAD SCI,CENT LAB SOLAR ENERGY & NEW ENERGY SOURCES,BU-1184 SOFIA,BULGARIA

[2] AF IOFFE PHYSICOTECH INST,LENINGRAD 194021,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 122卷 / 02期

关键词：

D O I：

10.1002/pssa.2211220221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure of CVD a-Si:H films is studied by means of IR absorption and field-assisted ion exchange. The decrease in microstructure with increasing substrate temperature is detected by both the methods. However, the amount of microstructure registered by IR measurements is significantly higher than that established by FAIE. This difference is attributed to oxygen contamination in the samples studied. Optical measurements are employed in order to estimate the band- and tail-state distributions. The effect of microstructure on the latter is different as compared to glow discharge a-Si:H. The correlations between microstructure and optical properties are discussed on the basis of recent studies.

引用

页码：599 / 605

页数：7

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