IMPATT STORY

被引：9

作者：

DELOACH, BC ^{[1
]}

机构：

[1] BELL TEL LABS INC, DEPT GALLIUM ARSENIDE LASER, MURRAY HILL, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 07期

关键词：

D O I：

10.1109/T-ED.1976.18469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 660

页数：4

共 15 条

[1]

DELOACH B, 1967, ADV MICROWAVES, V2

[2]

DELOACH BC, 1969, MICROWAVE SEMICONDUC, P464

[3]

DELOACH BC, 1966, MAY INT MICR S

[4] NOISE THEORY FOR READ TYPE AVALANCHE DIODE [J].

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :158-&

[5] GAAS AVALANCHE MICROWAVE OSCILLATORS [J].

IRVIN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :208-+

[6] A SILICON DIODE MICROWAVE OSCILLATOR [J].

JOHNSTON, RL ;

DELOACH, BC ;

COHEN, BG .

BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+

[7] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].

JOHNSTON, RL ;

SCHARFET.DL ;

BARTELIN.DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+

[8] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J].

LEE, CA ;

BATDORF, RL ;

WIEGMANN, W ;

KAMINSKY, G .

APPLIED PHYSICS LETTERS, 1965, 6 (05) :89-&

[9] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[10] HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].

PRAGER, HJ ;

CHANG, KKN ;

WEISBROD, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+

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