SPREADING OF AU DOTS ON INP SURFACES

被引:9
作者
ELIAS, KR
MAHAJAN, S
BAUER, CL
MILNES, AG
BONNER, WA
机构
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
[2] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
关键词
D O I
10.1063/1.339676
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1245 / 1250
页数:6
相关论文
共 12 条
[1]   CHEMICAL ETCHING CHARACTERISTICS OF (001)INP [J].
ADACHI, S ;
KAWAGUCHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1342-1349
[3]   METALLURGICAL BEHAVIOR OF GOLD-BASED OHMIC CONTACTS TO THE INP/INGAASP MATERIAL SYSTEM [J].
CAMLIBEL, I ;
CHIN, AK ;
ERMANIS, F ;
DIGIUSEPPE, MA ;
LOURENCO, JA ;
BONNER, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2585-2590
[4]   CHARACTERIZATION OF OHMIC CONTACTS TO INP [J].
ERICKSON, LP ;
WASEEM, A ;
ROBINSON, GY .
THIN SOLID FILMS, 1979, 64 (03) :421-426
[5]   EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J].
FAUST, JW ;
SAGAR, A .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :331-333
[6]   DIFFUSION IN COMPOUND SEMICONDUCTORS [J].
GOLDSTEIN, B .
PHYSICAL REVIEW, 1961, 121 (05) :1305-&
[7]  
KERAMIDAS VG, 1981, I PHYS C SER, V56, P293
[8]   ON THE FORMATION OF BINARY COMPOUNDS IN AU-INP SYSTEM [J].
PIOTROWSKA, A ;
AUVRAY, P ;
GUIVARCH, A ;
PELOUS, G ;
HENOC, P .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5112-5117
[9]   INTERDIFFUSION AND CHEMICAL TRAPPING AT INP(110) INTERFACES WITH AU, AL, NI, CU, AND TI [J].
SHAPIRA, Y ;
BRILLSON, LJ ;
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW B, 1984, 30 (08) :4586-4594
[10]   STRUCTURAL STUDY OF ALLOYED GOLD METALLIZATION CONTACTS ON INGAASP/INP LAYERS [J].
VANDENBERG, JM ;
TEMKIN, H ;
HAMM, RA ;
DIGIUSEPPE, MA .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7385-7389