HARTREE-FOCK CLUSTER STUDY OF INTERSTITIAL TRANSITION-METALS IN SILICON

被引：5

作者：

BROER, R ^{[1
]}

AISSING, G ^{[1
]}

NIEUWPOORT, WC ^{[1
]}

FEINER, LF ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY | 1986年 / 29卷 / 05期

关键词：

D O I：

10.1002/qua.560290505

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1059 / 1066

页数：8

共 21 条

[1]

BEELER F, 1985, PREPRINT

[2] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980

[3] THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858

[4] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4962-4971

[5]

DUNNING TH, 1970, MODERN THEORETICAL C, V3

[6]

HAY PJ, 1977, J CHEM PHYS, V66, P437

[7] GAUSSIAN-TYPE FUNCTIONS FOR POLYATOMIC SYSTEMS .I. [J].

HUZINAGA, S .

JOURNAL OF CHEMICAL PHYSICS, 1965, 42 (04) :1293-&

[8] CHEMICAL TRENDS IN GROUND-STATE AND EXCITED-STATE PROPERTIES OF INTERSTITIAL 3D IMPURITIES IN SILICON [J].

KATAYAMAYOSHIDA, H ;

ZUNGER, A .

PHYSICAL REVIEW B, 1985, 31 (12) :8317-8320

[9] CALCULATION OF THE SPIN-POLARIZED ELECTRONIC-STRUCTURE OF AN INTERSTITIAL IRON IMPURITY IN SILICON [J].

KATAYAMAYOSHIDA, H ;

ZUNGER, A .

PHYSICAL REVIEW B, 1985, 31 (12) :7877-7899

[10] LOCALIZATION AND MAGNETISM OF AN INTERSTITIAL IRON IMPURITY IN SILICON [J].

KATAYAMAYOSHIDA, H ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1984, 53 (13) :1256-1259

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