HIGH-ENERGY-DENSITY PULSED ION-BEAM IRRADIATION OF CO/SI, PT/SI, AND AU/SI

被引:14
作者
FASTOW, R [1 ]
MAYER, JW [1 ]
机构
[1] CORNELL UNIV, DEPT MAT SCI & ENGN, ITHACA, NY 14853 USA
关键词
D O I
10.1063/1.338851
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:175 / 181
页数:7
相关论文
共 23 条
[1]   DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE [J].
ALLMEN, MV ;
WITTMER, M .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :68-70
[2]   PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON [J].
BRAT, T ;
EIZENBERG, M ;
FASTOW, R ;
PALMSTROM, CJ ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :264-269
[3]  
CAHN RW, 1983, PHYSICAL METALLURGY
[4]  
CELLER GK, 1980, LASER ELECTRON BEAM, P435
[5]   EPITAXIAL NISI2 FORMATION BY PULSED ION-BEAM ANNEALING [J].
CHEN, LJ ;
HUNG, LS ;
MAYER, JW ;
BAGLIN, JEE ;
NERI, JM ;
HAMMER, DA .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :595-597
[6]   PULSED ION-BEAM IRRADIATION OF SILICON [J].
CHU, WK ;
MADER, SR ;
GOREY, EF ;
BAGLIN, JEE ;
HODGSON, RT ;
NERI, JM ;
HAMMER, DA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :443-447
[8]   EUTECTIC MELTING BY PULSED ION-BEAM IRRADIATION [J].
FASTOW, R ;
MAYER, JW ;
BRAT, T ;
EIZENBERG, M ;
OLOWOLAFE, JO .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1052-1054
[9]   PULSED ION-BEAM MELTING OF SILICON [J].
FASTOW, R ;
MARON, Y ;
MAYER, J .
PHYSICAL REVIEW B, 1985, 31 (02) :893-898
[10]  
FASTOW R, 1985, THESIS CORNELL U