MOSFET FABRICATION USING ION-BEAM NITRIDATION

被引：8

作者：

TROXELL, JR

机构：

[1] GM, Research Lab, Warren, MI, USA, GM, Research Lab, Warren, MI, USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 06期

关键词：

ION BEAM NITRIDATION - LOCAL OXIDATION - NITROGEN IMPLANTATION;

D O I：

10.1007/BF02654307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：707 / 728

页数：22

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