X-RAY CRYSTAL TRUNCATION ROD SCATTERING MEASUREMENT OF ASH3-EXPOSED INP/INPAS/INP SINGLE HETEROSTRUCTURES

被引：56

作者：

TAKEDA, Y

SAKURABA, Y

FUJIBAYASHI, K

TABUCHI, M

KUMAMOTO, T

TAKAHASHI, I

HARADA, J

KAMEI, H

机构：

[1] NAGOYA UNIV,SCH ENGN,DEPT APPL PHYS,NAGOYA,AICHI 46401,JAPAN

[2] SUMITOMO ELECT IND LTD,OPTOELECTR RES & DEV LABS,YOKOHAMA 244,KANAGAWA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.114203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic-level heterointerface structures of InP samples that contain growth interrupted and AsH3-exposed surface, with 20 Å thick cap layer, were revealed by x-ray crystal truncation rod scattering measurement. The As atom distribution, the thickness of the cap layer, and the tetragonal distortion of the lattices were obtained from the samples that have only single modified layer in the whole InP wafer. The calculated total amounts of As matched well with the value obtained by fluorescence x-ray analysis. © 1995 American Institute of Physics.

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页码：332 / 334

页数：3

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