BULK IMAGE EFFECTS OF PHOTORESIST IN 3-DIMENSIONAL PROFILE SIMULATION

被引：1

作者：

ISHIZUKA, T ^{[1
]}

机构：

[1] FUJI RES INST CORP,MINATO KU,TOKYO 108,JAPAN

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1108/eb051715

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

3D bulk image effects in high-NA lens lithography are studied through 3D exposure and development simulations by applying a Mack model to the 3D exposure process.

引用

页码：389 / 400

页数：12

共 13 条

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