A 3-DIMENSIONAL PHOTORESIST IMAGING PROCESS SIMULATOR FOR STRONG STANDING-WAVE EFFECT ENVIRONMENT

被引：17

作者：

MONIWA, A ^{[1
]}

MATSUZAWA, T ^{[1
]}

ITO, T ^{[1
]}

SUNAMI, H ^{[1
]}

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 03期

关键词：

IMAGE PROCESSING - Mathematical Models - LITHOGRAPHY - Photolithography - SUBSTRATES - Surfaces;

D O I：

10.1109/TCAD.1987.1270289

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The three-dimensional (3-D) photoresist imaging process simulator TRIPS-I has been improved to cope with the strong standing-wave effect in photoresists on flat substrate surfaces. To allow insertion of development vectors, which is necessary to advance photoresist-developer interface under the strong standing-wave effect, development vectors are calculated using the information of neighboring vectors. This information is recorded in units of triangles that are defined by the tips of the three nearest development vectors. The triangular elements have also the advantage that precise expression is possible for complicated 3-D photoresist images resulting from a serious standing-wave effect. A photoresist imaging profile with a strong standing-wave effect showing good agreement with the actual photoresist image has been successfully simulated.

引用

页码：431 / 438

页数：8

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