EFFECT OF DOPING ON THE THERMAL-OXIDATION OF GAAS

被引：13

作者：

LEVINSOHN, N

BESERMAN, R

CYTERMANN, C

BRENER, R

KHAIT, YL

REGEL, GK

MUSOLF, J

WEYERS, M

BRAUERS, A

BALK, P

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of n-type Si and p-type Zn dopants on the low-temperature thermal oxidation of GaAs was studied by Raman scattering and Auger electron spectroscopy. It was found that the oxidation process is significantly affected by the dopants, resulting in a much thinner oxide layer than that obtained in undoped GaAs. The arsenic liberated by the oxidation reaction was observed to accumulate at the oxide/GaAs interface. The process of free As buildup at the interface is accompanied by its crystallization and both processes are strongly enhanced by the presence of dopants.

引用

页码：1131 / 1133

页数：3

共 18 条

[1] CHANGES IN THE THERMAL-OXIDATION OF GALLIUM-ARSENIDE INDUCED BY ION-IMPLANTATION [J].