CHANGES IN THE THERMAL-OXIDATION OF GALLIUM-ARSENIDE INDUCED BY ION-IMPLANTATION

被引：1

作者：

BUTCHER, DN

SEALY, BJ

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 02期

关键词：

Gallium arsenide; III–V semiconductors; Ion implantation; Oxidation;

D O I：

10.1049/el:19790036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion implantation on the growth of oxides formed on gallium arsenide in oxygen at 510°C for 2¼ h has been studied. Thirteen ion species were implanted at doses of 1 × 1015 ions cm−2. Potassium, nitrogen and fluorine produced significant increases in oxidation, whereas calcium, aluminium and nickel had the opposite effect. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：51 / 52

页数：2

共 9 条

[1] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J].