HIGHLY DOPED GAAS-SI BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

SACKS, R

SHEN, H

机构：

[1] CUNY BROOKLYN COLL,BROOKLYN,NY 11210

[2] CUNY,GRAD SCH,DEPT PHYS,NEW YORK,NY 10036

[3] EATON CORP,AIL DIV,MELVILLE,NY 11747

[4] CUNY CTR,NEW YORK,NY 10036

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：374 / 376

页数：3

共 13 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[2] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING [J].

CARDONA, M .

PHYSICAL REVIEW, 1961, 121 (03) :752-&

[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[4] COMPENSATION IN N-TYPE GAAS RESULTING FROM NITROGEN ION-IMPLANTATION [J].

DUNCAN, WM ;

MATTESON, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1059-1062

[5] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].

HEIBLUM, M ;

WANG, WI ;

OSTERLING, LE ;

DELINE, V .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753

[6] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J].

ISHIBASHI, T ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L476-L478

[7]

OKIMOTO K, 1983, APPL PHYS LETT, V43, P1062

[8] FREE CARRIER REDUCTION IN VACUUM-ANNEALED S-DOPED, SN-DOPED, AND GE-DOPED (100) INP [J].

SCHWARTZ, GP ;

GUALTIERI, GJ ;

DUBOIS, LH ;

BONNER, WA ;

BALLMAN, AA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1716-1720

[9]

SHEN H, 1985, SOC PHOTOOPT INSTRUM, V524

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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