(HGCD)TE-SIO2 INTERFACE STRUCTURE

被引：30

作者：

WILSON, JA

COTTON, VA

SILBERMAN, J

LASER, D

SPICER, WE

MORGEN, P

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] ODENSE UNIV,DK-5230 ODENSE M,DENMARK

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572215

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1719 / 1722

页数：4

共 9 条

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[2] AES SPUTTER PROFILES OF ANODIC OXIDE-FILMS ON (HG,CD)TE [J].

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[3] STABILITY OF AN ATOMICALLY CLEAN HG1-XCDXTE SURFACE IN VACUUM AND UNDER O-2 EXPOSURE [J].

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[4] HG1-XCDXTE NATIVE OXIDE REDUCTION BY CVD SIO2 [J].

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KVAAS, RE .

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[5]

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[6] OPTICAL AND FIELD-EFFECT STUDIES OF THE HG0.7CD0.3 TE-ANODIC OXIDE INTERFACE [J].

SCHOOLAR, RB ;

JANOUSEK, BK ;

ALT, RL ;

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FOTE, AA .

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[7]

SCHWARZ SA, 1981, NBS PUBLICATION 4006

[8] DOMINANCE OF ATOMIC STATES IN A SOLID - SELECTIVE BREAKDOWN OF THE VIRTUAL CRYSTAL APPROXIMATION IN A SEMICONDUCTOR ALLOY, HG1-XCDXTE [J].

SPICER, WE ;

SILBERMAN, JA ;

MORGEN, J ;

LINDAU, I ;

WILSON, JA ;

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW LETTERS, 1982, 49 (13) :948-951

[9]

WILSON JA, 1982, M IRIS SPECIALTY GRO

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