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ELECTRON AVALANCHE INJECTION ON 10-NM DIELECTRIC FILMS
被引:8
作者
:
DORI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DORI, L
[
1
]
ARIENZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARIENZO, M
[
1
]
NGUYEN, TN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
NGUYEN, TN
[
1
]
FISCHETTI, MV
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FISCHETTI, MV
[
1
]
STEIN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
STEIN, KJ
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 05期
关键词
:
D O I
:
10.1063/1.338948
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1910 / 1915
页数:6
相关论文
共 20 条
[1]
NEW RESULTS ON ELECTRON INJECTION, HOLE INJECTION, AND TRAPPING IN MONOS NONVOLATILE MEMORY DEVICES
AGARWAL, AK
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
AGARWAL, AK
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
WHITE, MH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(05)
: 941
-
951
[2]
INSITU ARSENIC-DOPED POLYSILICON FOR VLSI APPLICATIONS
ARIENZO, M
论文数:
0
引用数:
0
h-index:
0
ARIENZO, M
MEGDANIS, AC
论文数:
0
引用数:
0
h-index:
0
MEGDANIS, AC
SACKLES, PE
论文数:
0
引用数:
0
h-index:
0
SACKLES, PE
MICHEL, AE
论文数:
0
引用数:
0
h-index:
0
MICHEL, AE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(10)
: 1535
-
1538
[3]
SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 94
-
96
[4]
ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709
[5]
IMPROVEMENT IN VERY THIN GATE OXIDE INTEGRITY BY ION-IMPLANTATION
BAGLEE, DA
论文数:
0
引用数:
0
h-index:
0
BAGLEE, DA
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(04)
: 94
-
95
[6]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[7]
DEWITT G, 1984, MODERN MOS TECHNOLOG, P109
[8]
THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FEIGL, FJ
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YOUNG, DR
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
LAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LAI, S
CALISE, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CALISE, J
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
: 5665
-
5682
[9]
TRAP GENERATION AND ELECTRON DETRAPPING IN SIO2 DURING HIGH-FIELD STRESSING OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
HEYNS, MM
论文数:
0
引用数:
0
h-index:
0
HEYNS, MM
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
HILLEN, MW
论文数:
0
引用数:
0
h-index:
0
HILLEN, MW
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(02)
: 202
-
204
[10]
HOFMANN KR, 1981, P C INSULATING FILMS, P122
←
1
2
→
共 20 条
[1]
NEW RESULTS ON ELECTRON INJECTION, HOLE INJECTION, AND TRAPPING IN MONOS NONVOLATILE MEMORY DEVICES
AGARWAL, AK
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
AGARWAL, AK
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015
WHITE, MH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(05)
: 941
-
951
[2]
INSITU ARSENIC-DOPED POLYSILICON FOR VLSI APPLICATIONS
ARIENZO, M
论文数:
0
引用数:
0
h-index:
0
ARIENZO, M
MEGDANIS, AC
论文数:
0
引用数:
0
h-index:
0
MEGDANIS, AC
SACKLES, PE
论文数:
0
引用数:
0
h-index:
0
SACKLES, PE
MICHEL, AE
论文数:
0
引用数:
0
h-index:
0
MICHEL, AE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(10)
: 1535
-
1538
[3]
SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 94
-
96
[4]
ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709
[5]
IMPROVEMENT IN VERY THIN GATE OXIDE INTEGRITY BY ION-IMPLANTATION
BAGLEE, DA
论文数:
0
引用数:
0
h-index:
0
BAGLEE, DA
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(04)
: 94
-
95
[6]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[7]
DEWITT G, 1984, MODERN MOS TECHNOLOG, P109
[8]
THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FEIGL, FJ
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YOUNG, DR
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
LAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LAI, S
CALISE, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CALISE, J
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
: 5665
-
5682
[9]
TRAP GENERATION AND ELECTRON DETRAPPING IN SIO2 DURING HIGH-FIELD STRESSING OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
HEYNS, MM
论文数:
0
引用数:
0
h-index:
0
HEYNS, MM
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
HILLEN, MW
论文数:
0
引用数:
0
h-index:
0
HILLEN, MW
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(02)
: 202
-
204
[10]
HOFMANN KR, 1981, P C INSULATING FILMS, P122
←
1
2
→