LIQUID-PHASE EPITAXY OF HEAVILY MG-DOPED GAAS - FORMATION OF A NEW NEAR-BAND-EDGE EMISSION EXCLUSIVELY PERTINENT TO ACCEPTOR IMPURITIES

被引：6

作者：

MORI, M ^{[1
]}

MAKITA, Y ^{[1
]}

OKADA, Y ^{[1
]}

OHNISHI, N ^{[1
]}

MITSUHASHI, Y ^{[1
]}

TANAKA, H ^{[1
]}

MATSUMORI, T ^{[1
]}

机构：

[1] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3212 / 3215

页数：4

共 12 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] DETERMINATION OF IONIZATION ENERGY OF MAGNESIUM IN GALLIUM ARSENIDE [J].

BENNETT, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (11) :1679-&

[3]

GREENE D, 1975, J PHYS CHEM SOLIDS, V36, P1041

[4] INFRARED STUDY OF SHALLOW ACCEPTOR STATES IN GAAS [J].

KIRKMAN, RF ;

STRADLING, RA ;

LINCHUNG, PJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (02) :419-433

[5]

KRESSEL H, 1970, J APPL PHYS, V37, P1865

[6] PHOTOLUMINESCENCE OF MG-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING MG3AS2 AS A MG SOURCE - A COMPARISON WITH MG+ ION-IMPLANTATION [J].

MAKITA, Y ;

TAKEUCHI, Y ;

OHNISHI, N ;

NOMURA, T ;

KUDO, K ;

TANAKA, H ;

LEE, HC ;

MORI, M ;

MITSUHASHI, Y .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1184-1186

[7] SELECTIVE OPTICAL COMPENSATION EFFECT OF 2 NEW NEAR-BAND-EDGE EMISSIONS IN SIMULTANEOUSLY ACCEPTOR (ZN+) AND DONOR (SE+) ION-IMPLANTED GAAS [J].

MAKITA, Y ;

NOMURA, T ;

KUDO, K ;

IRIE, K ;

OHNISHI, N ;

TAKEUCHI, Y ;

TANAKA, H ;

TANOUE, H ;

MITSUHASHI, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :442-444

[8] DOPING AND ELECTRICAL-PROPERTIES OF MG IN LPE A1XGA1-XAS [J].

MUKAI, S ;

MAKITA, Y ;

GONDA, S .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1304-1307

[9] CONCENTRATION RATIO DEPENDENCE OF SELECTIVE OPTICAL COMPENSATION EFFECT IN DUALLY ZN+ AND SE+ ION-IMPLANTED GAAS [J].

NOMURA, T ;

MAKITA, Y ;

IRIE, K ;

OHNISHI, N ;

KUDO, K ;

TANAKA, H ;

MITSUHASHI, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (25) :1745-1747

[10] A THEORETICAL EXPLANATION FOR THE RED ENERGY SHIFT OF A NEWLY DISCOVERED, EXCLUSIVELY ACCEPTOR-ASSOCIATED EMISSION IN GAAS [J].

OHNISHI, N ;

MAKITA, Y ;

MORI, M ;

IRIE, K ;

TAKEUCHI, Y ;

SHIGETOMI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1833-1836

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