CONCENTRATION RATIO DEPENDENCE OF SELECTIVE OPTICAL COMPENSATION EFFECT IN DUALLY ZN+ AND SE+ ION-IMPLANTED GAAS

被引：14

作者：

NOMURA, T

MAKITA, Y

IRIE, K

OHNISHI, N

KUDO, K

TANAKA, H

MITSUHASHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 25期

关键词：

D O I：

10.1063/1.96822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1745 / 1747

页数：3

共 14 条

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[6] NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS [J].

MAKITA, Y ;

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[7] PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].

MAKITA, Y ;

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KUDO, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :623-625

[8] FORMATION OF RADIATIVE COMPLEX-CENTERS BY DUAL IMPLANTATION OF C+ AND O+ IONS INTO GAAS [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :765-769

[9] FORMATION OF A NEW DEEP EMISSION IN SI+,S+,SE+, AND TE+ ION-IMPLANTED GAAS [J].

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[10]

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