PHOTOLUMINESCENCE SPECTRA OF UNDOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY HIGH AND LOW SUBSTRATE TEMPERATURES

被引：29

作者：

KUDO, K

MAKITA, Y

TAKAYASU, I

NOMURA, T

KOBAYASHI, T

IZUMI, T

MATSUMORI, T

机构：

[1] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[2] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

MOLECULAR BEAM EPITAXY - PHOTOLUMINESCENCE - Spectrum Analysis - SEMICONDUCTOR MATERIALS - Impurities;

D O I：

10.1063/1.336559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation mechanisms of residual impurities in GaAs layers grown by molecular-beam epitaxy has been investigated by high-resolution photoluminescence (PL) spectroscopy at 2 K. A systematic study of near-band-edge emissions of undoped GaAs layers grown at a wide range of growth temperatures (T//g), 470-750 degree C, demonstrates that PL spectra related with residual impurities are significantly dependent upon T//g. It was found that maximum emission intensity of free exciton is obtained at T//g approx 550 degree C, and the minimum impurity incorporation is established at T//g of 550-650 degree C.

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页码：888 / 891

页数：4

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