FORMATION OF RADIATIVE COMPLEX-CENTERS BY DUAL IMPLANTATION OF C+ AND O+ IONS INTO GAAS

被引：6

作者：

MAKITA, Y

NOMURA, T

YOKOTA, M

KUDO, K

TAKEUCHI, Y

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90408-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：765 / 769

页数：5

共 9 条

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MAKITA, Y ;

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[7] PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].

MAKITA, Y ;

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APPLIED PHYSICS LETTERS, 1985, 47 (06) :623-625

[8] PHOTO-LUMINESCENCE OF CARBON-IMPLANTED GAAS [J].

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[9]

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