INDIUM ARSENIDE QUANTUM WIRES FABRICATED BY ELECTRON-BEAM LITHOGRAPHY AND WET-CHEMICAL ETCHING

We report the fabrication of deeply etched quantum wires on an InAs/AlGaSb heterostructure by utilizing electron beam lithography and wet-chemical etching. In order to avoid the inherent gate leakage current in heterostructures based on antimonides, deeply etched wire structures have been investigated. In two terminal devices of approximately 1000 angstrom wide quantum wires, quantized drain current through drain-induced-barrier-lowering has been observed at 77 K. Coulomb regulated SET characteristics were also observed at 77 K reflecting the small parasitic capacitance between terminals. Coulomb staircase characteristics and 1-D quantized current were seen to overlap in some devices. Various combinations of device parameter conditions have been discussed. Material, structural and temperature effects on the prospective device performances have been also discussed.