INVESTIGATION OF FORMATION CONDITIONS OF THERMAL DONOR-I AND DONOR-II IN OXYGEN-CONTAINING N-TYPE SILICON WITHIN THE TEMPERATURE-RANGE 400-DEGREES-C TO 800-DEGREES-C

被引：15

作者：

BARANSKII, PI

BABICH, VM

BARAN, NP

DOTSENKO, YP

KOVALCHUK, VB

SHERSHEL, VA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：733 / 739

页数：7

共 24 条

[1]

[Anonymous], SIMMETRIYA DEFORMATS

[2] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) :255-&

[3] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].

CAPPER, P ;

JONES, AW ;

WALLHOUSE, EJ ;

WILKES, JG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655

[4] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].

CAZCARRA, V ;

ZUNINO, P .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211

[5] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[6] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[7] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :699-707

[8] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :K223-K226

[9] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[10]

Grinshtein P. M., 1982, ELEKTRON TEKH MATER, P33

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