QUANTITATIVE-EVALUATION OF THE EBIC CONTRAST OF DISLOCATIONS

[11] ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : 573 - 583

[12] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : R51 - R80

[13] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784

[14] OURMAZD A, 1981, I PHYS C SER, V60, P215

[15] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 197 - 209

[16] A CONTRIBUTION TO THE THEORY OF THE EBIC CONTRAST OF LATTICE-DEFECTS IN SEMICONDUCTORS [J]. ULTRAMICROSCOPY, 1981, 6 (03) : 237 - 250

[17] INVESTIGATION OF THE ELECTRONIC EFFECTS OF DISLOCATIONS BY STEM [J]. ULTRAMICROSCOPY, 1981, 7 (01) : 99 - 104

[11] ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : 573 - 583

[12] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : R51 - R80

[13] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784

[14] OURMAZD A, 1981, I PHYS C SER, V60, P215

[15] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 197 - 209

[16] A CONTRIBUTION TO THE THEORY OF THE EBIC CONTRAST OF LATTICE-DEFECTS IN SEMICONDUCTORS [J]. ULTRAMICROSCOPY, 1981, 6 (03) : 237 - 250

[17] INVESTIGATION OF THE ELECTRONIC EFFECTS OF DISLOCATIONS BY STEM [J]. ULTRAMICROSCOPY, 1981, 7 (01) : 99 - 104