CHARACTERIZATION OF DAMAGE ON GAAS IN A REACTIVE ION-BEAM ETCHING SYSTEM USING SCHOTTKY DIODES

被引：15

作者：

SUGATA, S ^{[1
]}

ASAKAWA, K ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：876 / 879

页数：4

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[4]

LANG DV, 1975, I PHYS C SER, V23, P581

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MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

[6]

MATSUNAMI N, ENERGY DEPENDENCE YI

[7]

PANG SW, 1984, SOLID STATE TECH APR, P249

SUGATA, S ;

ASAKAWA, K .

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