CATHODOLUMINESCENCE OF OVAL DEFECTS IN GAAS/ALXGA1-XAS EPILAYERS USING AN OPTICAL FIBER LIGHT COLLECTION SYSTEM

被引：7

作者：

HOENK, ME

VAHALA, KJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 21期

关键词：

D O I：

10.1063/1.100319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2062 / 2064

页数：3

共 14 条

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

DOHSEN, M ;

ARAI, M ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :117-122

[2] SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

LAURET, N ;

BRABANT, JC .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :472-474

[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[4]

COCITO M, 1986, SCANNING MICROSCOPY, V1986, P1299

[5] ELECTRON-BEAM PENETRATION IN GAAS [J].

MARTINELLI, RU ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3350-3351

[6] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATTESON, S ;

SHIH, HD .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :47-49

[7] CHARACTERIZATION OF OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY GA0.7AL0.3AS LAYERS BY SPATIALLY RESOLVED CATHODOLUMINESCENCE [J].

PAPADOPOULO, AC ;

ALEXANDRE, F ;

BRESSE, JF .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :224-226

[8] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS [J].

PETTIT, GD ;

WOODALL, JM ;

WRIGHT, SL ;

KIRCHNER, PD ;

FREEOUF, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :241-242

[9]

SMITH JS, 1986, THESIS CALTECH

[10] GA2O3 AND PARTICULATES - THE ORIGINS OF OVAL DEFECTS IN GAAS-RELATED MOLECULAR-BEAM EPITAXY [J].

WENG, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :725-729

← 1 2 →