GA2O3 AND PARTICULATES - THE ORIGINS OF OVAL DEFECTS IN GAAS-RELATED MOLECULAR-BEAM EPITAXY

被引：16

作者：

WENG, SL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：725 / 729

页数：5

共 15 条

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

DOHSEN, M ;

ARAI, M ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :117-122

[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[3]

CALAWA AR, UNPUB

[4] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[5]

COLLINS DL, COMMUNICATION

[6] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].

FROSCH, CJ ;

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&

[7] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUJIWARA, K ;

NISHIKAWA, Y ;

TOKUDA, Y ;

NAKAYAMA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :701-703

[8] STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION [J].

KAKIBAYASHI, H ;

NAGATA, F ;

KATAYAMA, Y ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L846-L848

[9] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATTESON, S ;

SHIH, HD .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :47-49

[10] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS [J].

PETTIT, GD ;

WOODALL, JM ;

WRIGHT, SL ;

KIRCHNER, PD ;

FREEOUF, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :241-242

← 1 2 →