SELECTIVE AND ANISOTROPIC REACTIVE ION ETCH OF LPCVD SILICON-NITRIDE WITH CHF3 BASED GASES

被引：29

作者：

MELE, TC ^{[1
]}

NULMAN, J ^{[1
]}

KRUSIUS, JP ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：684 / 687

页数：4

共 14 条

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