STRAIN-ASSISTED P-TYPE DOPING OF II-VI SEMICONDUCTORS

被引：10

作者：

REN, SY ^{[1
]}

DOW, JD ^{[1
]}

KLEMM, S ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA, HEFEI, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2065 / 2068

页数：4

共 20 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[2] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1735-1737

[3] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[4]

DOW JD, 1988, NATO ADV SCI I B, V183

[5] OPTICAL STUDIES OF SHALLOW ACCEPTORS IN CDS AND CDSE [J].

HENRY, CH ;

NASSAU, K ;

SHIEVER, JW .

PHYSICAL REVIEW B, 1971, 4 (08) :2453-&

[6] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[7] HYDROSTATIC-PRESSURE DEPENDENCIES OF DEEP IMPURITY LEVELS IN ZINCBLENDE SEMICONDUCTORS [J].

HONG, RD ;

JENKINS, DW ;

REN, SY ;

DOW, JD .

PHYSICAL REVIEW B, 1988, 38 (17) :12549-12555

[8]

HONG RD, 1987, MATERIALS RES SOC S, V77, P545

[9] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].

HSU, WY ;

DOW, JD ;

WOLFORD, DJ ;

STREETMAN, BG .

PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615

[10] DEPENDENCE ON UNIAXIAL-STRESS OF DEEP LEVELS IN III-V-COMPOUND AND GROUP-IV ELEMENTAL SEMICONDUCTORS [J].

JENKINS, DW ;

REN, SY ;

DOW, JD .

PHYSICAL REVIEW B, 1989, 39 (11) :7881-7894

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