PHOTOELECTROCHEMICAL ETCHING OF N-INP IN A THIN-FILM CELL

被引：5

作者：

GREBEL, H ^{[1
]}

ISKANDAR, B ^{[1
]}

SHEPPARD, KG ^{[1
]}

机构：

[1] STEVENS INST TECHNOL LIB,DEPT MAT SCI & ENGN,HOBOKEN,NJ 07030

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.101964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2655 / 2657

页数：3

共 7 条

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[5] PHOTO-ELECTROCHEMICAL ETCHING OF INTEGRAL LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES [J].

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BURTON, RH .

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[6] KINETICS AND MORPHOLOGY OF GAAS ETCHING IN AQUEOUS CRO3-HF SOLUTIONS [J].

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[7]

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