COMPARISONS OF INSTABILITIES IN SCALED CMOS DEVICES BETWEEN PLASTIC AND HERMETICALLY ENCAPSULATED DEVICES

被引：1

作者：

NOYORI, M

NAKATA, Y

SHIRAGASAWA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 10期

关键词：

D O I：

10.1109/T-ED.1983.21291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1305 / 1313

页数：9

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