CHARACTERISTICS OF CADMIUM TELLURIDE SURFACES PREPARED BY PULSED LASER IRRADIATION

被引:4
作者
MONTGOMERY, V
DINAN, JH
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D O I
10.1016/0040-6090(85)90022-7
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T [工业技术];
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08 ;
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页码:11 / 17
页数:7
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共 20 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]  
COWAN PL, 1980, J VAC SCI TECHNOL, V17, P197
[3]   LASER PROCESSING OF UHV-DEPOSITED THIN SILICON FILMS [J].
DEJONG, T ;
SMIT, L ;
KORABLEV, VV ;
TROMP, RM ;
SARIS, FW .
APPLIED SURFACE SCIENCE, 1982, 10 (01) :10-20
[4]   AN EXPERIMENTAL TEST OF GAAS DECOMPOSITION DUE TO PULSED LASER IRRADIATION [J].
DEJONG, T ;
WANG, ZL ;
SARIS, FW .
PHYSICS LETTERS A, 1982, 90 (03) :147-149
[5]   ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].
DINAN, JH ;
GALBRAIT.LK ;
FISCHER, TE .
SURFACE SCIENCE, 1971, 26 (02) :587-&
[6]  
DINAN JH, 1983, UNPUB
[7]  
EBINA A, 1980, PHYS REV B, V22, P1980, DOI 10.1103/PhysRevB.22.1980
[8]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF VACUUM-CLEAVED (110) CADMIUM TELLURIDE [J].
FEINSTEIN, LG ;
SHOEMAKER, DP .
SURFACE SCIENCE, 1965, 3 (03) :294-+
[9]   A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].
FULLER, CS ;
ALLISON, HW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) :880-880