GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

被引：18

作者：

DUNSTAN, DJ

DIXON, RH

KIDD, P

HOWARD, LK

WILKINSON, VA

LAMBKIN, JD

JEYNES, C

HALSALL, MP

LANCEFIELD, D

EMENY, MT

GOODHEW, PJ

HOMEWOOD, KP

SEALY, BJ

ADAMS, AR

机构：

[1] UNIV SURREY,STRAINED LAYER STRUCT RES GRP,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[3] UNIV E ANGLIA,SCH PHYS,NORWICH NR4 7TJ,NORFOLK,ENGLAND

[4] RSRE,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

[5] UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 126卷 / 04期

关键词：

D O I：

10.1016/0022-0248(93)90808-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth of 3 mum thick relaxed layers of InxGa1-xAs on GaAs substrates, with x from 0.1 to 1, and give some results of compositional, optical, structural and electrical characterisation. Compositions were determined by several techniques. with results which agreed to within a DELTAx of +/- 0.02. For x above 0.2 the crystal quality is very poor. Some layers have been grown with stepped compositions up to x = 0.4 and this improves the crystal quality. We show that in the InGaAs/GaAs system there is a threshold strain, rather than threshold composition change, above which crystal quality is degraded.

引用

页码：589 / 600

页数：12

共 21 条

[1] GEOMETRICAL-THEORY OF CRITICAL THICKNESS AND RELAXATION INSTRAINED-LAYER GROWTH [J].